0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 BSS63R features sot23 pnp silicon planar absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -110 v collector-emitter voltage v ceo -100 v emitter-base voltage v ebo -6 v continuous collector current i c -100 ma power dissipation p tot 330 mw operating and storage temperature range t j, t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v (br)cbo i c =-10a -110 v collector-emitter breakdown voltage * v (br)ceo i c =-100a -100 v emitter-base breakdown voltage v (br)ebo i e =-10a -6 v collector-base cut-off current i cbo v cb =-90v v cb =-90v,ta = 150 -100 -50 na a emitter-base current i ebo v eb =-6v -200 na collector-emitter saturation voltage v ce( sat) i c =-25ma, i b =-2.5ma -250 v base-emitter saturation voltage v be( sat) i c =-25ma, i b =-2.5ma -900 v dc current gain h fe i c =-10ma,v ce =-1v i c =-25ma,v ce =-1v 30 30 transitional frequency f t i c =25ma, v ce =-5v, f=35mhz 50 85 mhz output capacitance c obo v cb =-10v, f=1mhz 3 pf * pulse test: tp = 300 s; d 0.02. marking marking t6 smd type smd type smd type smd type smd type smd type smd type product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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